BTA41 datasheet(2/9 Pages) STMICROELECTRONICS

Nome de Peças	BTA41

Descrição Electrónicos	40 A standard TRIACs

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

BTA40, BTA41, BTB41

2/9

Doc ID 7469 Rev 8

1

Characteristics

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current

(full sine wave)

TOP3

Tc = 95 °C

40

A

RD91 / TOP ins.

Tc = 80 °C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

400

A

F = 60 Hz

t = 16.7 ms

420

I²tI²t Value for fusing

tp = 10 ms

1000

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

50

A/µs

VDSM/VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

Tj = 25 °C

VDSM/VRSM +

100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

8

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IGT

(1)

VD = 12 V

RL = 33 Ω

I - II - III

IV

MAX.

50

100

mA

VGT

ALL

MAX.

1.3

V

VGD

VD = VDRM RL = 3.3 kΩ Tj = 125 °C

ALL

MIN.

0.2

V

IH (2)

IT = 500 mA

MAX.

80

mA

IL

IG = 1.2 IGT

I - III - IV

MAX.

70

mA

II

160

dV/dt(2)

VD = 67% VDRM gate open

Tj = 125 °C

MIN.

500

V/µs

(dV/dt)c(2)

(dI/dt)c = 20 A/ms

Tj = 125 °C

MIN.

10

V/µs

1.

Minimum IGT is guaranted at 5% of IGT max.

2.

for both polarities of A2 referenced to A1

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