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2SC4935 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SC4935
Descrição Electrónicos  Power Amplifier Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4935 Folha de dados(HTML) 1 Page - Toshiba Semiconductor

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2SC4935
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4935
Power Amplifier Applications
• Good hFE linearity
• Complementary to 2SA1869 and 5-watt-output applications.
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
0.3
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
―
―
1.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
―
1.0
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
―
―
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.5 A
70
―
240
DC current gain
hFE (2)
VCE = 2 V, IC = 2.5 A
30
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.2 A
―
0.4
0.6
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.5 A
―
0.75
1.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
80
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
30
―
pF
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)


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