2SD1220

2010-02-05

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SD1220

Power Amplifier Applications

• Complementary to 2SB905

Characteristics

Symbol

Rating

Unit

Collector-base voltage

150

V

Collector-emitter voltage

150

V

Emitter-base voltage

6

V

Collector current

1.5

A

Base current

1.0

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)