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XX1001-BD Folha de dados(PDF) 1 Page - Mimix Broadband |
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XX1001-BD Folha de dados(HTML) 1 Page - Mimix Broadband |
1 / 6 page Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 Features General Description Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Fundamental Rejection RF Input Power (RF Pin) Output Power at 0.0 dBm Pin (Pout) Drain Supply Voltage (Vd1) Doubler Drain Supply Voltage (Vd2) Buffer Amp Drain Supply Voltage (Vd3,4,5,6) PA Gate Supply Voltage (Vg1) Doubler Drain Supply Current (Id1) Doubler Drain Supply Current (Id2) Buffer Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) PA Units GHz GHz dB dB dBc dBm dBm V V V V mA mA mA Min. 18.0 36.0 - - - - - - - - - - - - Typ. - - TBD 12.0 50.0 0.0 +26.0 2.5 3.0 4.5 -1.2 <1.0 20 530 Max. 21.0 42.0 - - - - - 3.0 4.0 5.5 - - 25 600 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 800 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout Page 1 of 6 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. 1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. November 2008 - Rev 03-Nov-08 X1001-BD |
Nº de peça semelhante - XX1001-BD |
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Descrição semelhante - XX1001-BD |
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