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SM1200B Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças SM1200B
Descrição Electrónicos  1.0 A Schottky Barrier Rectifiers
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SM1200B Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SM1200B
VOLTAGE 200 V
1.0 A Schottky Barrier Rectifiers
09-Jul-2010 Rev. A
Page 1 of 2
DO-214AA (SMB)
.220(5.59)
.200(5.08)
.185(4.70)
.160(4.06)
.012(0.31)
.006(0.15)
.083(2.11)
.075(1.91)
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.155(3.94)
.130(3.30)
.008
(.203)
MAX.
Dimens ions in inche
s and (millimeters )
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideal for surface mount applications
Easy pick and place
Built-in strain relief
Low forward voltage drop
PACKAGING INFORMATION
Case: Molded Plastic
Epoxy: UL 94V-0 Rate Flame Retardant
Metallurgically bonded construction
Polarity: Color Band Denotes Cathode End
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
SM1200B
UNITS
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
VRRM
VRWM
VR
200
200
200
V
Maximum Average Forward Rectified Current See Fig. 1
IF(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
25
A
Maximum Instantaneous Forward Voltage @ IF=1A TA=25°C
(Note: 3)
@ IF=1A TA=125°C
VF
0.9
0.72
V
Maximum DC Reverse Current
@ TA = 25°C
At Rated DC Blocking Voltage
@ TA = 125°C
(Note: 3)
IR
30
5
uA
mA
Typical Junction Capacitance (Note1)
CJ
50
pF
Typical Thermal Resistance
RθJL
25
°C/W
Operating Temperature Range
TJ
-50 ~ + 150
°C
Storage temperature
TSTG
-65 ~ + 175
°C
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0 V D.C.
2. Thermal Resistance Junction to Lead.
3. Pulse test: 300us pulse width, 1% duty cycle


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