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SM1200B Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SM1200B Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente SM1200B VOLTAGE 200 V 1.0 A Schottky Barrier Rectifiers 09-Jul-2010 Rev. A Page 1 of 2 DO-214AA (SMB) .220(5.59) .200(5.08) .185(4.70) .160(4.06) .012(0.31) .006(0.15) .083(2.11) .075(1.91) .096(2.44) .083(2.13) .050(1.27) .030(0.76) .155(3.94) .130(3.30) .008 (.203) MAX. Dimens ions in inche s and (millimeters ) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ideal for surface mount applications Easy pick and place Built-in strain relief Low forward voltage drop PACKAGING INFORMATION Case: Molded Plastic Epoxy: UL 94V-0 Rate Flame Retardant Metallurgically bonded construction Polarity: Color Band Denotes Cathode End Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER SYMBOL SM1200B UNITS Maximum Recurrent Peak Reverse Voltage Working Peak Reverse Voltage Maximum DC Blocking Voltage VRRM VRWM VR 200 200 200 V Maximum Average Forward Rectified Current See Fig. 1 IF(AV) 1.0 A Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 25 A Maximum Instantaneous Forward Voltage @ IF=1A TA=25°C (Note: 3) @ IF=1A TA=125°C VF 0.9 0.72 V Maximum DC Reverse Current @ TA = 25°C At Rated DC Blocking Voltage @ TA = 125°C (Note: 3) IR 30 5 uA mA Typical Junction Capacitance (Note1) CJ 50 pF Typical Thermal Resistance RθJL 25 °C/W Operating Temperature Range TJ -50 ~ + 150 °C Storage temperature TSTG -65 ~ + 175 °C NOTES: 1. Measured at 1MHz and applied reverse voltage of 4.0 V D.C. 2. Thermal Resistance Junction to Lead. 3. Pulse test: 300us pulse width, 1% duty cycle |
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Descrição semelhante - SM1200B |
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