MJ11033G datasheet(1/4 Pages) ONSEMI

Nome de Peças	MJ11033G

Descrição Electrónicos	High-Current Complementary Silicon Power Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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September, 2008 − Rev. 6

1

Publication Order Number:

MJ11028/D

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High-Current

Complementary Silicon

Power Transistors

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200_C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJ11028/29

MJ11030

MJ11032/33

VCEO

60

90

120

Vdc

Collector−Base Voltage

MJ11028/29

MJ11030

MJ11032/33

VCBO

60

90

120

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

− Peak (Note 1)

IC

50

100

Adc

Base Current − Continuous

IB

2.0

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°C @ TC = 100_C

PD

300

1.71

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 55 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Maximum Lead Temperature for

Soldering Purposes for v 10 seconds

TL

275

_C

Thermal Resistance, Junction−to−Case

RqJC

0.58

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204 (TO−3)

CASE 197A

STYLE 1

50 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

60 − 120 VOLTS

300 WATTS

MARKING

DIAGRAM

MJ110xx = Device Code

xx = 28, 29, 30, 32, 33

G= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

http://onsemi.com

MJ110xxG

AYYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

COLLECTOR

CASE

BASE

1

EMITTER 2

COLLECTOR

CASE

BASE

1

EMITTER 2

NPN

PNP

MJ11028

MJ11029

MJ11030

MJ11032

MJ11033

2

1

Nº de peça semelhante - MJ11033G

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ON Semiconductor	MJ11033G	68Kb / 4P	High?묬urrent Complementary Silicon Power Transistors December, 2005 ??Rev. 5

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