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1N4006 Folha de dados(PDF) 1 Page - Diotec Semiconductor

Nome de Peças 1N4006
Descrição Electrónicos  Silicon Rectifier Diodes ??Silizium-Gleichrichterdioden
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N4006 Folha de dados(HTML) 1 Page - Diotec Semiconductor

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1N4001 ... 1N4007, 1N4007-13, EM513, EM516, EM518
1N4001 ... 1N4007, 1N4007-13,
EM513, EM516, EM518
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2009-10-16
Dimensions - Maße [mm]
Nominal current
Nennstrom
1 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...2000 V
Plastic case
Kunststoffgehäuse
DO-41
DO-204AL
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N4001
50
50
1N4002
100
100
1N4003
200
200
1N4004
400
400
1N4005
600
600
1N4006
800
800
1N4007
1000
1000
1N4007-13
1300
1300
EM513
1600
1600
EM516
1800
1800
EM518
2000
2000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
TA = 100°C
IFAV
1 A 1)
0.8 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
10 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
50/55 A
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
12.5 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 0.77±0.07
Ø 2.6
-0.1


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