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1N1199A Folha de dados(PDF) 2 Page - Diotec Semiconductor

Nome de Peças 1N1199A
Descrição Electrónicos  Silicon-Power-Rectifiers
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N1199A Folha de dados(HTML) 2 Page - Diotec Semiconductor

  1N1199A_07 Datasheet HTML 1Page - Diotec Semiconductor 1N1199A_07 Datasheet HTML 2Page - Diotec Semiconductor  
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1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277
Characteristics
Kennwerte
Forward Voltage – Durchlass-Spannung
Tj = 25°C
IF = 30 A
VF
< 1.5 V
Leakage Current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 100 µA
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 2 K/W
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
10-20 UNF
M 5
18 ± 10% lb.in.
2 ± 10% Nm
© Diotec Semiconductor AG
http://www.diotec.com/
2
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
[°C]
T
C
150
100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
I
F
[A]
10
10
10
1
10
3
2
-1
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
T = 25°C
j
T = 125°C
j
220a-(30a-1,5v)
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
10
10
10
3
2
[A]
î
F
1
10
10
[n]
10
2
3


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