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8TQ080GSPBF Folha de dados(PDF) 1 Page - Vishay Siliconix |
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8TQ080GSPBF Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 94264 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 23-Mar-10 1 Schottky Rectifier, 8 A VS-8TQ080GSPbF, VS-8TQ100GSPbF Vishay High Power Products FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8 A VR 80 V/100 V D2PAK Anode 1 3 Base cathode 2 N/C MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 8 A VRRM Range 80/100 V IFSM tp = 5 μs sine 850 A VF 8 Apk, TJ = 125 °C 0.58 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-8TQ080GSPbF VS-8TQ100GSPbF UNITS Maximum DC reverse voltage VR 80 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8 A Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 850 A 10 ms sine or 6 ms rect. pulse 230 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 60 mH 7.50 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A |
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