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2SC1096 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1096 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1096 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 30 V ICBO Collector cut-off current VCB=30V;IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1.0A ; VCE=5V 40 250 COB Output capacitance IE=0; VCB=10V;f=1.0MHz 55 pF fT Transition frequency IC=0.1A ; VCE=5V 65 MHz hFE-1 classifications N M L K 40-60 50-100 80-160 120-250 |
Nº de peça semelhante - 2SC1096 |
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Descrição semelhante - 2SC1096 |
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