2SD103 datasheet(1/2 Pages) ISC

Nome de Peças	2SD103

Descrição Electrónicos	isc Silicon NPN Power Transistors

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2SD103

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 50V(Min)

·High Power Dissipation-

: PC= 25W(Max)@TC=25℃

Complement to Type 2SB503

APPLICATIONS

·Designed for audio power amplifier, power switching, DC-DC

converter and regulator applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

3

A

IE

Emitter Current-Continuous

-3

A

IB

B

Base Current-Continuous

1

A

PC

Collector Power Dissipation

@TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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2SD103 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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Nº de peça semelhante - 2SD103

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