Os motores de busca de Datasheet de Componentes eletrônicos |
|
2SD1157 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD1157 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 50 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA B 0.5 V VB E(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA B 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 250 Switching times ton Turn-on Time 0.5 μs tstg Storage Time 3.0 μs tf Fall Time IC= 2A, IB1= -IB2= 0.2A; RL= 5Ω; PW= 20μs; Duty≤2% 0.8 μs isc Website:www.iscsemi.cn 2 |
Nº de peça semelhante - 2SD1157 |
|
Descrição semelhante - 2SD1157 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |