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BDY71 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY71 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY71 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 55 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V 1.7 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.5 mA ICEV Collector Cutoff Current VCE= 90V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 4V 80 200 fT Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V 0.8 MHz isc Website:www.iscsemi.cn 2 |
Nº de peça semelhante - BDY71 |
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Descrição semelhante - BDY71 |
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