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GT100DA60U Folha de dados(PDF) 6 Page - Vishay Siliconix

Nome de Peças GT100DA60U
Descrição Electrónicos  Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GT100DA60U Folha de dados(HTML) 6 Page - Vishay Siliconix

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GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 93185
6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
0.001
0.01
0.1
1
0.00001
93185_16
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.01
0.1
1
0.00001
93185_17
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC


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