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BUP40 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUP40 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BUP40 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.1A B -1.1 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.1A B -1.4 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 μA hFE-1 DC Current Gain IC= -1A; VCE= -2V 100 500 hFE-2 DC Current Gain IC= -5A; VCE= -5V 40 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 150 MHz COB Output Capacitance IE= 0; VCB= -10V 40 pF isc Website:www.iscsemi.cn 2 |
Nº de peça semelhante - BUP40 |
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Descrição semelhante - BUP40 |
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