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VEC2616 Folha de dados(PDF) 2 Page - Sanyo Semicon Device |
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VEC2616 Folha de dados(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page VEC2616 No. A1822-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 2.6 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=1.5A, VGS=10V 62 80 mΩ RDS(on)2 ID=0.75A, VGS=4.5V 76 106 mΩ RDS(on)3 ID=0.75A, VGS=4V 83 116 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 505 pF Output Capacitance Coss VDS=20V, f=1MHz 57 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 37 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.3 ns Rise Time tr See specified Test Circuit. 7.5 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 41 ns Fall Time tf See specified Test Circuit. 22 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=3A 10 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=3A 1.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=3A 2.1 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.81 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --60 V Zero-Gate Voltage Drain Current IDSS VDS=--60V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--1.5A 3.9 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--1.5A, VGS=--10V 105 137 mΩ RDS(on)2 ID=--0.75A, VGS=--4.5V 128 180 mΩ RDS(on)3 ID=--0.75A, VGS=--4V 138 194 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 420 pF Output Capacitance Coss VDS=--20V, f=1MHz 54 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 44 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6.4 ns Rise Time tr See specified Test Circuit. 9.8 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 65 ns Fall Time tf See specified Test Circuit. 36 ns Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--2.5A 11 nC Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--2.5A 1.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--2.5A 2 nC Diode Forward Voltage VSD IS=--2.5A, VGS=0V --0.83 --1.2 V |
Nº de peça semelhante - VEC2616 |
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Descrição semelhante - VEC2616 |
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