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VEC2616 Folha de dados(PDF) 2 Page - Sanyo Semicon Device

Nome de Peças VEC2616
Descrição Electrónicos  General-Purpose Switching Device Applications
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Fabricante Electrônico  SANYO [Sanyo Semicon Device]
Página de início  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

VEC2616 Folha de dados(HTML) 2 Page - Sanyo Semicon Device

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VEC2616
No. A1822-2/6
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1.5A
2.6
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=1.5A, VGS=10V
62
80
RDS(on)2
ID=0.75A, VGS=4.5V
76
106
RDS(on)3
ID=0.75A, VGS=4V
83
116
Input Capacitance
Ciss
VDS=20V, f=1MHz
505
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
57
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
37
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.3
ns
Rise Time
tr
See specified Test Circuit.
7.5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
41
ns
Fall Time
tf
See specified Test Circuit.
22
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=3A
10
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=3A
1.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=3A
2.1
nC
Diode Forward Voltage
VSD
IS=3A, VGS=0V
0.81
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1.5A
3.9
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--1.5A, VGS=--10V
105
137
RDS(on)2
ID=--0.75A, VGS=--4.5V
128
180
RDS(on)3
ID=--0.75A, VGS=--4V
138
194
Input Capacitance
Ciss
VDS=--20V, f=1MHz
420
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
54
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
44
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.4
ns
Rise Time
tr
See specified Test Circuit.
9.8
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
65
ns
Fall Time
tf
See specified Test Circuit.
36
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--2.5A
11
nC
Gate-to-Source Charge
Qgs
VDS=--30V, VGS=--10V, ID=--2.5A
1.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--30V, VGS=--10V, ID=--2.5A
2
nC
Diode Forward Voltage
VSD
IS=--2.5A, VGS=0V
--0.83
--1.2
V


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