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BUW13F Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUW13F Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUW13F BUW13AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUW13F 400 VCEO(SUS) Collector-emitter sustaining voltage BUW13AF IC=0.1A ; IB=0; L=25mH 450 V BUW13F IC=10A; IB=2A VCEsat Collector-emitter saturation voltage BUW13AF IC=8A; IB=1.6A 1.5 V BUW13F IC=10A; IB=2A VBEsat Base-emitter saturation voltage BUW13AF IC=8A; IB=1.6A 1.6 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125℃ 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 μs ts Storage time 4.0 μs tf Fall time For BUW13F IC=10A ;IB1=-IB2=-2A For BUW13AF IC=8A ;IB1=-IB2=-1.6A 0.8 μs |
Nº de peça semelhante - BUW13F |
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Descrição semelhante - BUW13F |
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