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BUW13F Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW13F Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF DESCRIPTION ・With TO-3PFa package ・High voltage;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BUW13F 850 VCBO Collector-base voltage BUW13AF Open emitter 1000 V BUW13F 400 VCEO Collector-emitter voltage BUW13AF Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal resistance from junction to ambient 35 K/W |
Nº de peça semelhante - BUW13F |
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Descrição semelhante - BUW13F |
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