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SI1032X-T1-GE3 Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SI1032X-T1-GE3 Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si1032R/X Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 www.vishay.com 1 N-Channel 1.5 V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5 • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.5 V Rated • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers PRODUCT SUMMARY VDS (V) RDS(on) ()ID (mA) 20 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) Top View 2 1 S D G 3 Marking Code: G SC-75A or SC-89 Notes: a. Surface mounted on FR4 board. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Si1032R Si1032X Unit 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 200 140 210 200 mA TA = 85 °C 110 100 150 140 Pulsed Drain Currenta IDM 500 600 Continuous Source Current (Diode Conduction)a IS 250 200 300 240 Maximum Power Dissipationa for SC-75 TA = 25 °C PD 280 250 340 300 mW TA = 85 °C 145 130 170 150 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V |
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Descrição semelhante - SI1032X-T1-GE3 |
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