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SI1411DH Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI1411DH Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si1411DH SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 3.3 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 2.4 A VGS = −10 V, ID = −0.5 A 2.05 2.05 Drain-Source On-State Resistance a rDS(on) VGS = −6 V, ID = −0.3 A 2.16 2.14 Ω Forward Transconductance a gfs VDS = −10 V, ID = −0.5 A 1 1.5 S Diode Forward Voltage a VSD IS = −1.4 A, VGS = 0 V −0.80 −0.80 V Dynamic b Total Gate Charge Qg 3.6 4.2 Gate-Source Charge Qgs 0.9 0.9 Gate-Drain Charge Qgd VDS = −75, VGS = −10, ID = −0.5 1.3 1.3 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 73342 S-62426 Rev. B, 04-Dec-06 |
Nº de peça semelhante - SI1411DH_06 |
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Descrição semelhante - SI1411DH_06 |
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