SI1428EDH datasheet(2/12 Pages) VISHAY

Nome de Peças	SI1428EDH

Descrição Electrónicos	N-Channel 30 V (D-S) MOSFET

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Document Number: 67825

S11-0861-Rev. A, 02-May-11

Vishay Siliconix

Si1428EDH

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

30

V

VDS Temperature Coefficient

VDS/TJ

ID = 250 µA

23

mV/°C

VGS(th) Temperature Coefficient

VGS(th)/TJ

- 3.2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.3

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 0.5

µA

VDS = 0 V, VGS = ± 12 V

± 25

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

VDS = 30 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS  5 V, VGS = 4.5 V

15

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 3.7 A

0.036

0.045



VGS = 4.5 V, ID = 3.6 A

0.040

0.049

VGS = 2.5 V, ID = 1.5 A

0.048

0.060

Forward Transconductancea

gfs

VDS = 15 V, ID = 3.7 A

17

S

Dynamicb

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 4.7 A

8.8

13.5

nC

VDS = 15 V, VGS = 4.5 V, ID = 4.7 A

46

Gate-Source Charge

Qgs

0.9

Gate-Drain Charge

Qgd

1.1

Gate Resistance

Rg

f = 1 MHz

0.4

2

4

k



Turn-On Delay Time

td(on)

VDD = 15 V, RL = 4.1 

ID  3.7 A, VGEN = 4.5 V, Rg = 1 

0.29

0.58

µs

Rise Time

tr

0.4

0.8

Turn-Off DelayTime

td(off)

1.9

3.8

Fall Time

tf

0.75

1.5

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 4.1 

ID  3.7 A, VGEN = 10 V, Rg = 1 

0.1

0.2

Rise Time

tr

0.15

0.3

Turn-Off DelayTime

td(off)

36

Fall Time

tf

0.75

1.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

2.3

A

Pulse Diode Forward Current

ISM

20

Body Diode Voltage

VSD

IS = 3.7 A, VGS = 0 V

0.85

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C

12

25

ns

Body Diode Reverse Recovery Charge

Qrr

510

nC

Reverse Recovery Fall Time

ta

6.5

ns

Reverse Recovery Rise Time

tb

5.5

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