Os motores de busca de Datasheet de Componentes eletrônicos |
|
SIZ702DT Folha de dados(PDF) 1 Page - Vishay Siliconix |
|
SIZ702DT Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix SiZ702DT New Product Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Channel-1 and Channel-2 30 0.012 at VGS = 10 V 16a 6.8 nC 0.0145 at VGS = 4.5 V 16a Ordering Information: SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 S2 S2 D1 D1 1 6 5 4 2 3 3.73 mm 6.00 mm PowerPAIR™ 6 x 3.7 D1 S1/D2 Pin 1 GHS GLS GND GND VIN VIN 1 6 5 4 2 3 VIN VSW VIN/D1 GND/S2 N-Channel 2 MOSFET N-Channel 1 MOSFET GHS/G1 VSW/S1/D2 GLS/G2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 67 °C/W for Channel-1 and for Channel-2. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16a A TC = 70 °C 16a TA = 25 °C 13.8b, c 14b, c TA = 70 °C 11b, c 11.2b, c Pulsed Drain Current IDM 50 Source Drain Current Diode Current TC = 25 °C IS 16a 16a TA = 25 °C 3.2b, c 3.7b, c Single Pulse Avalanche Current L = 0.1 mH IAS 18 Single Pulse Avalanche Energy EAS 16 mJ Maximum Power Dissipation TC = 25 °C PD 27 30 W TC = 70 °C 17.4 19 TA = 25 °C 3.9b, c 4.5b, c TA = 70 °C 2.5b, c 2.9b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 24 32 21 28 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 3.5 4.6 3.2 4.2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL • Low Current dc-to-dc |
Nº de peça semelhante - SIZ702DT |
|
Descrição semelhante - SIZ702DT |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |