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BF1005 Folha de dados(PDF) 2 Page - Siemens Semiconductor Group

Nome de Peças BF1005
Descrição Electrónicos  Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BF1005 Folha de dados(HTML) 2 Page - Siemens Semiconductor Group

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BF 1005
Semiconductor Group
2
Au -25-1998
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Drain-source breakdown voltage
ID = 650 µA, -VG1S = 4 V, - VG2S = 4 V
V
-
V(BR)DS
-
12
Gate 1 source breakdown voltage
±
IG1S = 10 mA, VG2S = VDS = 0
-
12
±
V(BR)G1SS
8
Gate 2 source breakdown voltage
±
IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
-
13
8
±
V(BR)G2SS
Gate 1 source current
VG1S = 6 V, VG2S = 0 V
-
100
µA
-
+
IG1SS
Gate 2 source leakage current
±
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
±
IG2SS
-
-
nA
50
IDSS
-
1.5
mA
-
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4.5 V
IDSO
8
10
Operating current (selfbiased)
VDS = 5 V, VG2S = 4.5 V
-
VG2S(p)
-
1
-
V
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
AC characteristics
Forward transconductance (self biased)
VDS = 5 V, VG2S = 4.5 V, f = 1 kHz
gfs
-
24
-
mS
Gate 1-input capacitance (self biased)
VDS = 5 V, VG2S = 4 V, f = 1 MHz
Cg1ss
-
2.1
2.5
pF
Output capacitance (self biased)
VDS = 5 V, VG2S = 4 V, f = 100 MHz
Cdss
-
1.3
-
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Gps
-
19
-
dB
Noise figure (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
F800
-
1.4
-
Gain control range (self biased)
VDS = 5 V, VG2S = 1 V, f = 800 MHz
∆G
ps
40
50
-
Semiconductor Group
2
1998-11-01


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