BF1009S datasheet(3/4 Pages) SIEMENS

Nome de Peças	BF1009S

Descrição Electrónicos	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

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Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

Página de início	http://www.siemens.com/

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3 / 4 page

BF 1009S

Semiconductor Group

3

Au -25-1998

Total power dissipation

Ptot = f (TS)

0

20

40

60

80

100

120 °C

150

TS

0

50

100

150

200

mW

300

Drain current

ID = f (VG2S)

0.0

1.0

2.0

3.0

4.0

V

6.0

VG2S

0

1

2

3

4

5

6

7

8

9

10

11

12

mA

15

Forward transfer admittance

|

Y21 | = f (VG2S)

0.0

1.0

2.0

3.0

4.0

V

6.0

VG2S

0

2

4

6

8

10

12

14

16

18

20

22

24

mS

28

Insertion power gain

|

S21 | 2 = f (VG2S)

0.0

1.0

2.0

3.0

4.0

V

6.0

VG2S

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

dB

10

Semiconductor Group

3

1998-11-01

Nº de peça semelhante - BF1009S

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	BF1009S	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF1009S	84Kb / 8P	Silicon N-Channel MOSFET Tetrode 2007-04-20
	BF1009SR	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF1009SR	84Kb / 8P	Silicon N-Channel MOSFET Tetrode 2007-04-20
	BF1009SW	48Kb / 4P	Silicon N-Channel MOSFET Tetrode Jun-28-2001

More results

Descrição semelhante - BF1009S

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Siemens Semiconductor G...	BF1005S	52Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012	33Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
	BF1005	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF2030W	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2030	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040W	31Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF1012W	359Kb / 3P	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
	BF998	180Kb / 8P	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

More results

BF1009S Folha de dados(PDF) 3 Page - Siemens Semiconductor Group

BF1009S Folha de dados(HTML) 3 Page - Siemens Semiconductor Group

Nº de peça semelhante - BF1009S

Descrição semelhante - BF1009S

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