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BUZ101 Folha de dados(PDF) 7 Page - Siemens Semiconductor Group

Nome de Peças BUZ101
Descrição Electrónicos  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
Download  9 Pages
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ101 Folha de dados(HTML) 7 Page - Siemens Semiconductor Group

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7
07/96
Semiconductor Group
BUZ 101
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter:
V
GS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
°C
180
T
j
2%
typ
98%
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter:
ID = 21 A, VGS = 10 V
-60
-20
20
60
100
°C
180
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.17
R
DS (on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter:
VGS = 0V, f = 1MHz
0
5
10
15
20
25
30
V
40
V
DS
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter:
Tj, tp = 80 µs
0
10
1
10
2
10
3
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)


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