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BUZ102S Folha de dados(PDF) 3 Page - Siemens Semiconductor Group

Nome de Peças BUZ102S
Descrição Electrónicos  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
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BUZ102S Folha de dados(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
30/Jan/1998
BUZ 102 S
SPP52N05
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 37 A
gfs
10
-
-
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
-
1220
1525
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
-
410
515
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
-
210
265
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8
td(on)
-
12
18
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8
tr
-
22
33
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8
td(off)
-
30
45
Fall time
VDD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8
tf
-
25
40
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V
Qg(th)
-
1.5
2.8
nC
Gate charge at 7.0 V
VDD = 40 V, ID = 52 A, VGS =0 to 7 V
Qg(7)
-
35
55
Gate charge total
VDD = 40 V, ID = 52 A, VGS =0 to 10 V
Qg(total)
-
45
70
Gate plateau voltage
VDD = 40 V, ID = 52 A
V(plateau)
-
5.9
-
V


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