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BUZ103AL Folha de dados(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ103AL Folha de dados(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 103AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d v/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 103AL 50 V 35 A 0.05 Ω TO-220 AB C67078-S1357-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 29 °C ID 35 A Pulsed drain current TC = 25 °C IDpuls 140 Avalanche energy, single pulse ID = 35 A, VDD = 25 V, RGS = 25 Ω L = 81 µH, Tj = 25 °C EAS 100 mJ Reverse diode d v/dt IS = 35 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C d v/dt 6 kV/µs Gate source voltage VGS ± 14 V Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation TC = 25 °C Ptot 120 W |
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