BUZ171 datasheet(7/9 Pages) SIEMENS

Nome de Peças	BUZ171

Descrição Electrónicos	SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

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Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

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7 / 9 page

7

07/96

Semiconductor Group

BUZ 171

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter:

I

D = -5 A, VGS = -10 V

-60

-20

20

60

100

°C

160

T

j

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

Ω

0.70

R

DS (on)

typ

98%

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter:

V

GS = VDS, ID = 1 mA

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-3.2

-3.6

-4.0

V

-4.6

V

GS(th)

-60

-20

20

60

100

°C

160

T

j

2%

typ

98%

Typ. capacitances

C = f (VDS)

parameter:

VGS = 0V, f = 1MHz

0

-5

-10

-15

-20

-25

-30

V

-40

V

DS

1

10

2

10

3

10

4

10

pF

C

rss

C

oss

C

iss

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter:

T

j, tp = 80 µs

-1

-10

0

-10

1

-10

2

-10

A

I

F

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

V

-3.0

V

SD

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

Nº de peça semelhante - BUZ171

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Inchange Semiconductor ...	BUZ171	64Kb / 2P	Easy driver for cost effective application

More results

Descrição semelhante - BUZ171

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Siemens Semiconductor G...	BUZ172	184Kb / 9P	SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
	BUZ173	180Kb / 9P	SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
	BUZ271	129Kb / 9P	SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
	BUZ272	202Kb / 9P	SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
	BSP170P	152Kb / 9P	SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)
	BUZ20	202Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
	BUZ255	128Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
	BUZ308	242Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
	BUZ30A	207Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
	BUZ31	197Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

More results

BUZ171 Folha de dados(PDF) 7 Page - Siemens Semiconductor Group

BUZ171 Folha de dados(HTML) 7 Page - Siemens Semiconductor Group

Nº de peça semelhante - BUZ171

Descrição semelhante - BUZ171

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