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BUZ272 Folha de dados(PDF) 2 Page - Siemens Semiconductor Group

Nome de Peças BUZ272
Descrição Electrónicos  SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ272 Folha de dados(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
07/96
BUZ 272
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
V(BR)DSS
-100
-
-
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
-2.1
-3
-4
Zero gate voltage drain current
VDS = -100 V, VGS = 0 V, Tj = 25 °C
VDS = -100 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
-10
-0.1
-100
-1
µA
Gate-source leakage current
VGS = -20 V, VDS = 0 V
IGSS
-
-10
-100
nA
Drain-Source on-resistance
VGS = -10 V, ID = -9.5 A
RDS(on)
-
0.2
0.3
Ω


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