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BUZ312 Folha de dados(PDF) 1 Page - Siemens Semiconductor Group

Nome de Peças BUZ312
Descrição Electrónicos  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ312 Folha de dados(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
07/96
BUZ 312
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 312
1000 V
6 A
1.5
Ω
TO-218 AA
C67078-S3129-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 33 °C
ID
6
A
Pulsed drain current
TC = 25 °C
IDpuls
24
Avalanche current,limited by
Tjmax
IAR
6
Avalanche energy,periodic limited by
Tjmax
EAR
17
mJ
Avalanche energy, single pulse
ID = 6 A, VDD = 50 V, RGS = 25 Ω
L = 43.8 mH, Tj = 25 °C
EAS
830
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 °C
Ptot
150
W
Operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 0.83
K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56


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