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BUZ71AL Folha de dados(PDF) 2 Page - Siemens Semiconductor Group

Nome de Peças BUZ71AL
Descrição Electrónicos  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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Fabricante Electrônico  SIEMENS [Siemens Semiconductor Group]
Página de início  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ71AL Folha de dados(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
07/96
BUZ 71 AL
Not for new design
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS
50
-
-
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-resistance
VGS = 5 V, ID = 7 A
RDS(on)
-
0.09
0.12


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