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2SK1070PIDTL-E Folha de dados(PDF) 1 Page - Renesas Technology Corp |
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2SK1070PIDTL-E Folha de dados(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page R07DS0282EJ0300 Rev.3.00 Page 1 of 4 Mar 28, 2011 Preliminary Datasheet 2SK1070 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline 1 2 3 1. Drain 2. Source 3. Gate RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –22 V Gate to source voltage VGSO –22 V Drain current ID 50 mA Gate current IG 10 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C R07DS0282EJ0300 (Previous: REJ03G0574-0200) Rev.3.00 Mar 28, 2011 |
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