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N0413N Folha de dados(PDF) 6 Page - Renesas Technology Corp |
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N0413N Folha de dados(HTML) 6 Page - Renesas Technology Corp |
6 / 8 page N0413N Chapter Title R07DS0555EJ0100 Rev.1.00 Page 6 of 6 Nov 07, 2011 Package Drawing (Unit: mm) TO-263 10.0±0.3 7.8 MIN. 4 12 3 0.5±0.2 1.27±0.2 0.8±0.1 0.254 1.3±0.2 0 to 0.25 2.4±0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 4.8 MAX. Equivalent Circuit Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
Nº de peça semelhante - N0413N |
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Descrição semelhante - N0413N |
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