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AM1432NE Folha de dados(PDF) 1 Page - Analog Power

Nome de Peças AM1432NE
Descrição Electrónicos  N-Channel 30V (D-S) MOSFET
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Fabricante Electrônico  ANALOGPOWER [Analog Power]
Página de início  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM1432NE Folha de dados(HTML) 1 Page - Analog Power

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AM1432NE
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM1432NE_A
1
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) ( )
ID (A)
0.033 @ VGS = 10 V
5.7
0.045 @ VGS = 4.5V
4.9
PRODUCT SUMMARY
30
N-Channel 30V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-6 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol Maximum Units
VDS
30
VGS
±20
TA=25
o
C
5.7
TA=70
o
C
4.6
IDM
±20
IS
1.6
A
TA=25
o
C
1.56
TA=70
o
C
0.81
TJ, Tstg
-55 to 150
o
C
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Paramete r
Pulsed Drain Current
b
V
Gate-Source Voltage
Symbol
Maximum Units
t <= 5 sec
100
Steady-State
166
THERMAL RESISTANCE RATINGS
Parameter
o
C/W
Maximum Junction-to-Ambient
a
RTHJA
SC70-6
Top View
D
D
S
D
D
G
1
2
3
6
5
4
D
1
S
1
G
1
N-Channel MOSFET
ESD
Protected


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