AZV831KSTR-G1 datasheet(8/24 Pages) BCDSEMI

Nome de Peças	AZV831KSTR-G1

Descrição Electrónicos	Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier

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Fabricante Electrônico	BCDSEMI [BCD Semiconductor Manufacturing Limited]

Página de início	http://www.bcdsemi.com

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Advance Datasheet

Single Low Bias Current, Low Voltage, Rail-to-Rail

Input/Output CMOS Operational Amplifier

Nov. 2011 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

8

AZV831

5.0V DC Electrical Characteristics

VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.

Parameter

Symbol

Conditions

Min Typ Max Unit

Input Offset Voltage

VOS

0.5

2.5

mV

Input Bias Current

IB

1.0

5.0

pA

Input Offset Current

IOS

2.0

pA

Input Common-mode Voltage Range

VCM

-0.3

5.3

V

VCM=-0.3V to 3.9V

70

85

Common-mode Rejection Ratio

CMRR

VCM=-0.3V to 5.3V

65

90

dB

RL=1kΩ connect to VCC/2,

VO=0.2V to 4.8V

80

92

Large Signal Voltage Gain

GV

RL=10kΩ connect to VCC/2,

VO=0.05V to 4.95V

85

98

dB

Input Offset Voltage Drift

ΔVOS/ΔT

2.0

μV/

°C

VIN=0.5V, RL=1kΩ connect to

VCC/2

25

50

Output Voltage Swing from Rail

VOL/VOH

VIN=0.5V, RL=10kΩ connect to

VCC/2

4

15

mV

Sink

ISINK

VOUT=VCC

100 150

Output Current

Source

ISOURCE VOUT=0V

110 185

mA

Closed-loop Output Impedance

f=1kHz, G=1 (note 2)

9

Ω

Power Supply Rejection Ratio

PSRR

VCC=1.6V to 5.0V, VCM=0.5V

70

80

dB

Supply Current

ICC

VCM<VCC-1V, IOUT=0

70

90

μA

5V AC Electrical Characteristics

VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.

Parameter

Symbol

Conditions

Min Typ Max

Unit

Gain Bandwidth Product

GBP

RL=100kΩ

1.0

MHz

Slew Rate

SR

G=1, 2V Step,

CL=100pF, RL=10kΩ

0.45

V/μs

Phase Margin

φM

RL=100kΩ

67

Degrees

THD+N

f=1kHz, G=1, VIN=1VPP

RL=10kΩ,CL=100pF

-70

dB

Voltage Noise Density

en

f=1kHz

27

Hz

nV/

Note 2: G is Closed-loop Voltage Gain.

Nº de peça semelhante - AZV831KSTR-G1

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Descrição semelhante - AZV831KSTR-G1

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