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FDD4685 Folha de dados(PDF) 3 Page - Fairchild Semiconductor

Nome de Peças FDD4685
Descrição Electrónicos  P-Channel PowerTrench짰 MOSFET -40V, -32A, 35m廓
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD4685 Folha de dados(HTML) 3 Page - Fairchild Semiconductor

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FDD4685_F085 Rev. C
www.fairchildsemi.com
3
Electrical Characteristics T
J = 25
oC unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
td(on)
Turn-On Delay Time
VDD = -20V, ID = -8.4A
VGS = -10V, RGEN = 6Ω
-
8
16
ns
tr
Rise Time
-
15
27
ns
td(off)
Turn-Off Delay Time
-
34
55
ns
tf
Fall Time
-
14
26
ns
VSD
Source to Drain Diode Voltage
ISD = -8.4A, VGS=0V
-
-0.85
-1.2
V
trr
Reverse Recovery Time
ISD = -8.4A, dISD/dt = 100A/μs
-30
45
ns
Qrr
Reverse Recovery Charge
-
31
47
nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Notes:
1: Starting TJ= 25°C, L = 3mH, IAS= 9A, VGS= 10V, VDD= 40V during the inductor charging time and 0V during the time in avalanche.


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