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FDD4685 Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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FDD4685 Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDD4685_F085 Rev. C www.fairchildsemi.com 3 Electrical Characteristics T J = 25 oC unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units td(on) Turn-On Delay Time VDD = -20V, ID = -8.4A VGS = -10V, RGEN = 6Ω - 8 16 ns tr Rise Time - 15 27 ns td(off) Turn-Off Delay Time - 34 55 ns tf Fall Time - 14 26 ns VSD Source to Drain Diode Voltage ISD = -8.4A, VGS=0V - -0.85 -1.2 V trr Reverse Recovery Time ISD = -8.4A, dISD/dt = 100A/μs -30 45 ns Qrr Reverse Recovery Charge - 31 47 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Notes: 1: Starting TJ= 25°C, L = 3mH, IAS= 9A, VGS= 10V, VDD= 40V during the inductor charging time and 0V during the time in avalanche. |
Nº de peça semelhante - FDD4685_08 |
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Descrição semelhante - FDD4685_08 |
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