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FDZ663P Folha de dados(PDF) 6 Page - Fairchild Semiconductor

Nome de Peças FDZ663P
Descrição Electrónicos  New Products, Tips and Tools for Power and Mobile Applications
Download  12 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ663P Folha de dados(HTML) 6 Page - Fairchild Semiconductor

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P-CHANNel PowerTrench® MOSFeTs
Save Space and Manage Thermal Issues
in Mobile Designs
Designers of mobile devices are challenged to save space, increase efficiency
and manage thermal issues in their end applications. Now minimizing both board
space and R
DS(ON) in a miniature form factor is possible with the FDZ661PZ
and FDZ663P P-channel, 1.5V specified PowerTrench® thin WLCSP MOS-
FETs. These advanced WLCSP MOSFETs use a state-of-the-art “fine pitch,”
thin WLCSP packaging process which enables the devices to combine excel-
lent thermal transfer characteristics, ultra-low profile (<0.4mm) and small
(0.8mm x 0.8mm) packaging, low gate charge, and low R
DS(ON).
Advantages
• Occupiesonly0.64mm2of
PCBarea
• Ultra-thinpackage:lessthan
0.4mmheightwhenmounted
toPCB
• Excellentthermal
characteristics
• HBMESDprotectionlevel
2kV(FDZ661PZ)
Applications
• Batterymanagement
• Loadswitch
• Batteryprotection
For more information, please visit:
fairchildsemi.com/pf/FD/FDZ661PZ.html
fairchildsemi.com/pf/FD/FDZ663P.html
State-of-the-Art Fine Pitch,Thin WLCSP for Mobile Devices
Product
Number
BV
DSS
(V)
V
GS
(V)
V
GS(th) (V) Typ
R
DS(ON)
(mΩ)
Max
Q
g Typ
(nC) @
V
GS =
4.5V
i
D
(A)
P
D
(W)
Package
FDZ661PZ
-20
±8
-1.5V
GS
- 4.5V
GS
6.3
8.8
-2.6
0.4
WlCSP
(0.8mm x 0.8mm)
315mΩ
140mΩ
FDZ663P
-20
±8
-1.5V
GS
- 4.5V
GS
5.9
8.2
-2.7
0.4
WlCSP
(0.8mm x 0.8mm)
288mΩ
134mΩ


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