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TYN20X-800T Folha de dados(PDF) 3 Page - NXP Semiconductors |
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3 / 12 page NXP Semiconductors TYN20X-800T SCR TYN20X-800T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 23 July 2012 3 / 12 Symbol Parameter Conditions Min Max Unit half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 - 210 A ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 231 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 220.5 A2s dIT/dt rate of rise of on-state current IT = 40 A; IG = 200 mA; dIG/ dt = 200 mA/µs - 50 A/µs IGM peak gate current - 5 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 20 W PG(AV) average gate power over any 20 ms period - 1 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C 003aaj873 0 5 10 15 20 25 -50 0 50 100 150 Th (°C) IT(RMS) (A) 75 °C Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values 003aaj875 0 30 60 90 120 10-2 10-1 1 10 surge duration (s) IT(RMS) (A) Fig. 2. RMS on-state current as a function of surge duration; maximum values |
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Descrição semelhante - TYN20X-800T |
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