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ST3400SRG Folha de dados(PDF) 1 Page - Stanson Technology

Nome de Peças ST3400SRG
Descrição Electrónicos  The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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Fabricante Electrônico  STANSON [Stanson Technology]
Página de início  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST3400SRG Folha de dados(HTML) 1 Page - Stanson Technology

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ST3400SRG
N Channel Enhancement Mode MOSFET
5.8A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400SRG 2009. V1
1
DESCRIPTION
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
.
PIN CONFIGURATION
SOT-23
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23
Y: Year Code
A: Week Code
FEATURE
30V/5.8A, RDS(ON) = 25m
(Typ.)
@VGS = 10V
30V/4.8A, RDS(ON) = 30m
@VGS = 4.5V
30V/4.0A, RDS(ON) = 40m
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
1
2
D
G
S
3
1
2
A0YA


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