ST3400SRG datasheet(3/6 Pages) STANSON

Nome de Peças	ST3400SRG

Descrição Electrónicos	The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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Fabricante Electrônico	STANSON [Stanson Technology]

Página de início	http://www.stansontech.com

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ST3400SRG

N Channel Enhancement Mode MOSFET

5.8A

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stnasontech.com

STN3400SRG 2009. V1

3

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=250uA

30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

0.5

1.5

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

nA

Zero Gate Voltage Drain

Current

IDSS

VDS=24V,VGS=0V

1

uA

VDS=24V,VGS=0V

TJ=55℃

10

Drain-source On-Resistance

RDS(on)

VGS=10V,ID=5.8A

VGS=4.5V,ID=4.8A

VGS=2.5V,ID=4.0A

25

30

40

mΩ

Forward Transconductance

gfs

VDS=4.5V,ID=5.8A

12

S

Diode Forward Voltage

VSD

IS=1.7A,VGS=0V

1.2

V

Dynamic

Total Gate Charge

Qg

VDS=15V

VGS=10V

ID≡6.7A

9.7

18

nC

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

3.1

Input Capacitance

Ciss

VDS=15V

VGS=0V

F=1MHz

450

pF

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

38

Turn-On Time

td(on)

tr

VDD=15V

RL=15Ω

ID=1.0A

VGEN=10V

RG=6Ω

7

15

nS

10

20

Turn-Off Time

td(off)

tf

20

40

11

20

Nº de peça semelhante - ST3400SRG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	ST3400SRG	493Kb / 9P	N-Channel 30-V (D-S) MOSFET

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ST3400SRG Folha de dados(PDF) 3 Page - Stanson Technology

ST3400SRG Folha de dados(HTML) 3 Page - Stanson Technology

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