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ACE2303B Folha de dados(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2303B Folha de dados(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE2303B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features V DS =-30V I D=-3.6A R DS(ON) 58m Ω @ V GS=-10V R DS(ON) 87m Ω @ V GS=-4.5V High density cell design for low R DS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID -3.6 A Pulsed (1) -10 Power Dissipation 25 OC PD 1.4 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3L 3 1 2 Ordering information ACE2303B XX + H SOT-23-3L Description 1 Gate 2 Source 3 Drain BM : SOT-23-3L Pb - free Halogen - free |
Nº de peça semelhante - ACE2303B |
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Descrição semelhante - ACE2303B |
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