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DM-111A Folha de dados(PDF) 1 Page - Sony Corporation

Nome de Peças DM-111A
Descrição Electrónicos  Magneto-Resistance Element
Download  7 Pages
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Fabricante Electrônico  SONY [Sony Corporation]
Página de início  http://www.sony.co.jp
Logo SONY - Sony Corporation

DM-111A Folha de dados(HTML) 1 Page - Sony Corporation

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E94706A5X-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage
VCC
10
V
• Operating temperature
Topr
–40 to +80
°C
• Storage temperature
Tstg
–50 to +100
°C
Recommended Operating Condition
5V
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
• Low power consumption
38µW (Typ.) at VCC=5V
• Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V
and H=4000A/m
• High reliability
Ensured through silicon nitride protective filming
Magneto-Resistance Element
M-102
(Plastic)
Electrical Characteristics
(Ta=25°C)
DM-111A
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Total resistance
Midpoint potential
Output voltage
RT
VC
VO
H=4000A/m,
θ=45°
VCC=5V , H=4000A/m
Revoiving magnetic field
VCC=5V , H=4000A/m
Revoiving magnetic field
500
2.47
30
650
2.50
75
800
2.53
k
V
mVp-p
For the availability of this product, please contact the sales office.


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