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FDD5810 Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDD5810
Descrição Electrónicos  N-Channel Logic Level Trench짰 MOSFET 60V, 36A, 27m"||" "474244
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5810 Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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FDD5810_F085 Rev. A1 (W)
www.fairchildsemi.com
2
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
r
20
V
ID
Drain Current Continuous (VGS = 10V)
37
A
Drain Current Continuous (VGS = 5V)
33
A
Continuous (TA = 25
oC, V
GS = 10V, with RTJA = 52
oC/W)
7.4
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
45
mJ
PD
Power Dissipation
72
W
Derate above 25oC
0.48
W/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
RTJC
Maximum Thermal resistance Junction to Case TO-252
2.1
oC/W
RTJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD5810
FDD5810_F085
TO-252AA
330mm
16mm
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
60
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 48V
-
-
1
P
A
VGS = 0V
TC = 150
oC
-
-
250
IGSS
Gate to Source Leakage Current
VGS = r20V
-
-
r
100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250PA
1
1.6
2
V
RDS(ON)
Drain to Source On Resistance
ID = 32A, VGS = 10V
-
18
22
m:
ID = 29A, VGS = 5V
-
22
27
ID = 32A, VGS = 10V,
TJ = 175
oC
-
43
53
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
1420
1890
pF
Coss
Output Capacitance
-
150
200
pF
Crss
Reverse Transfer Capacitance
-
65
100
pF
RG
Gate Resistance
f = 1MHz
-
3.5
-
:
Qg
Total Gate Charge at 10V
VGS = 0V to 10V
VDD = 30V
ID = 35A
-
24
34
nC
Qg
Total Gate Charge at 5V
VGS = 0V to 5V
-
13
18
nC
Qg(th)
Threshold Gate Charge
VGS = 0V to 1V
-
1.3
-
nC
Qgs
Gate to Source Gate Charge
-
4.0
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
2.7
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.0
-
nC


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