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HUFA75639S3ST Folha de dados(PDF) 3 Page - Fairchild Semiconductor

Nome de Peças HUFA75639S3ST
Descrição Electrónicos  56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUFA75639S3ST Folha de dados(HTML) 3 Page - Fairchild Semiconductor

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CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
-
2000
-
pF
Output Capacitance
COSS
-
500
-
pF
Reverse Transfer Capacitance
CRSS
-65
-
pF
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 56A
-
-
1.25
V
Reverse Recovery Time
trr
ISD = 56A, dISD/dt = 100A/µs
-
-
110
ns
Reverse Recovered Charge
QRR
ISD = 56A, dISD/dt = 100A/µs
-
-
320
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
TC, CASE TEMPERATURE (
oC)
0
10
20
30
40
50
60
25
50
75
100
125
150
175
0.01
0.1
1
10-5
10-4
10-3
10-2
10-1
100
101
SINGLE PULSE
t, RECTANGULAR PULSE DURATION (s)
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
HUFA75639S3ST_F085A
©2012 Fairchild Semiconductor Corporation
HUFA75639S3ST_F085A Rev. C1


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