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FQD6N40C Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQD6N40C Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. Features • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) Symbol Parameter FQD6N40C / FQU6N40C Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 4.5 A - Continuous (TC = 100°C) 2.7 A IDM Drain Current - Pulsed (Note 1) 18 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 2.5 W Power Dissipation (TC = 25°C) 48 W - Derate above 25°C 0.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient.* -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient. -- 110 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G I-PAK FQU Series D-PAK FQD Series GS D GS D October 2008 QFET ® • RoHS Compliant ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 |
Nº de peça semelhante - FQD6N40C_08 |
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Descrição semelhante - FQD6N40C_08 |
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