NPN BDW83, BDW83A, BDW83B,

BDW83C, BDW83D,

23/10/2012

COMSET SEMICONDUCTORS

1 | 3

They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec

TO-218 plastic package.

They are intended for use in power linear and switching applications.

The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

BDW83

45

V

BDW83A

60

BDW83B

80

BDW83C

100

BDW83D

120

Collector- Emitter Voltage

BDW83

45

V

BDW83A

60

BDW83B

80

BDW83C

100

BDW83D

120

Emitter-Base Voltage

5

V

Collector Current

15

A

Base Current

0.5

A

Total Power Dissipation

25°C case temperatur

150

W

25°C free aire temperatur

3.5

Junction Temperature

-65 to +150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Junction to Case Thermal Resistance

0.83

°C/W

Junction to Free Air Thermal Resistance

35.7

N

S