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ACE2302BM+H Folha de dados(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2302BM+H Folha de dados(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE2302 N-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-23-3 3 1 2 Ordering information ACE2302 XX + H Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 20 V Gate Threshold Voltage VGS(th) VD=VGS, ID=250uA 0.45 1.2 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA VDS=20V, VGS=0V TJ=55℃ 10 On-State Drain Current ID(ON) VDS≧5V, VGS=4.5V 6 A VDS≧5V, VGS=2.5V 4 Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=3.6A 0.050 0.080 Ω VGS=2.5V, ID=3.1A 0.070 0.095 Forward gfs VDS=5V,ID=3.6A 10 S SOT-23-3 Description 1 Gate 2 Source 3 Drain BM : SOT-23-3 Pb - free Halogen - free |
Nº de peça semelhante - ACE2302BM+H |
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Descrição semelhante - ACE2302BM+H |
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