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ACE2305BM+H Folha de dados(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2305BM+H Folha de dados(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE2305 P-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-23-3 3 1 2 Ordering information ACE2305 XX + H Electrical Characteristics (TA=25℃, Unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -15 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.35 -0.85 Gate Leakage Current IGSS VDS=0.V, VGS=±10V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V -1 uA VDS=-12V, VGS=0V TJ=55℃ -10 On-State Drain Current ID(ON) VDS≦-5V, VGS=-4.5V -4 A VDS≦-5V, VGS=-2.5V -2 Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.5A 0.055 0.70 Ω VGS=-2.5V, ID=-3.0A 0.065 0.85 VGS=-1.8V, ID=-2.0A 0.085 0.105 Forward Transconductance Gfs VDS=-5.0V, ID=-3.5A 8.5 S Diode Forward Voltage VSD IS=-1.5A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-6V, VGS=-4.5V, ID≡-2.8A 4.8 8 nC Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd 1.0 SOT-23-3 Description 1 Gate 2 Source 3 Drain BM: SOT-23-3 Pb - free Halogen - free |
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Descrição semelhante - ACE2305BM+H |
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