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OP284EP Folha de dados(PDF) 4 Page - Analog Devices

Nome de Peças OP284EP
Descrição Electrónicos  Precision Rail-to-Rail Input & Output Operational Amplifiers
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Fabricante Electrônico  AD [Analog Devices]
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OP284EP Folha de dados(HTML) 4 Page - Analog Devices

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REV. 0
–4–
OP184/OP284/OP484
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min Typ
Max
Units
INPUT CHARACTERISTICS
Offset Voltage “OP184/284E” Grade VOS
(Note 1)
100
µV
–40
°C ≤ T
A ≤ +125°C
200
µV
Offset Voltage “OP284F” Grade
VOS
175
µV
–40
°C ≤ T
A ≤ +125°C
375
µV
Offset Voltage “OP484E” Grade
VOS
150
µV
–40
°C ≤ T
A
≤ +125°C
300
µV
Offset Voltage “OP484F” Grade
VOS
250
µV
–40
°C ≤ T
A
≤ +125°C
500
µV
Input Bias Current
IB
80
350
nA
–40
°C ≤ T
A
≤ +125°C
575
nA
Input Offset Current
IOS
–40
°C ≤ T
A ≤ +125°C50
nA
Input Voltage Range
–15
+15
V
Common-Mode Rejection Ratio
CMRR
VCM = –14.0 V to +14.0 V, –40
°C ≤ T
A
≤ +125°C86
90
dB
Common-Mode Rejection Ratio
CMRR
VCM = –15.0 V to +15.0 V
80
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ, –10 V ≤ VO ≤ 10 V
150
1000
V/mV
RL = 2 k
Ω, –40°C ≤ T
A
≤ +125°C
75
V/mV
Offset Voltage Drift “E” Grade
∆V
OS/∆T
0.2
2.00
µV/°C
Bias Current Drift
∆I
B/
∆T
150
pA/
°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1.0 mA
+14.8
V
Output Voltage Low
VOL
IL = 1.0 mA
–14.875 V
Output Current
IOUT
±10
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS =
±2.0 V to ±18 V, –40°C ≤ T
A
≤ +125°C90
dB
Supply Current/Amplifier
ISY
VO = 0 V, –40°C ≤ TA ≤ +125°C
2.0
mA
Supply Current/Amplifier
ISY
VS =
±18 V, –40°C ≤ T
A
≤ +125°C
2.25
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
2.4
4.0
V/
µs
Full-Power Bandwidth
BWp
1% Distortion, RL = 2 k
Ω, V
O = 29 V p-p
35
kHz
Settling Time
tS
To 0.01%, 10 V Step
4
µs
Gain Bandwidth Product
GBP
4.25
MHz
Phase Margin
Øo
50
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.3
µV p-p
Voltage Noise Density
en
f = 1 kHz
3.9
nV/
√Hz
Current Noise Density
in
0.4
pA/
√Hz
NOTES
1Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
Specifications subject to change without notice.
WAFER TEST LIMITS
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage OP284
VOS
65
µV max
Offset Voltage OP484
VOS
75
µV max
Input Bias Current
IB
350
nA max
Input Offset Current
IOS
50
nA max
Input Voltage Range
VCM
V– to V+
V min
Common-Mode Rejection Ratio
CMRR
VCM = +1 V to +4 V
86
dB min
Power Supply Rejection Ratio
PSRR
VS = ± 2 V to ± 18 V
90
dB min
Large Signal Voltage Gain
AVO
RL = 2 k
50
V/mV min
Output Voltage High
VOH
IL = 1.0 mA
4.85
V min
Output Voltage Low
VOL
IL = 1.0 mA
125
mV max
Supply Current/Amplifier
ISY
VO = 0 V, RL =
1.45
mA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
(@ VS = +5.0 V, VCM = 2.5 V, TA = +25 C unless otherwise noted)
(@ VS =
15.0 V, VCM = 0 V, TA = +25 C unless otherwise noted)


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