1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

UHF/VHF Transistor

PNP Silicon

• Designed for UHF/VHF Amplifier Applications

• High Current Gain Bandwidth Product

fT = 2000 MHz Min @ 10 mA

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

–15

Vdc

Collector–Base Voltage

VCBO

–15

Vdc

Emitter–Base Voltage

VEBO

–4.0

Vdc

DEVICE MARKING

MMBTH69LT1 = M3J

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board (1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)

V(BR)CEO

–15

—

—

Vdc

Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0)

V(BR)CBO

–15

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)

V(BR)EBO

–4.0

—

—

Vdc

Collector Cutoff Current (VCB = –10 Vdc, IE = 0)

ICBO

—

—

–100

nAdc

ON CHARACTERISTICS

DC Current Gain (IC = –10 mAdc, VCE = –10 Vdc)

hFE

30

—

300

—

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)

fT

2000

—

—

MHz

Collector–Base Capacitance

(VCE = –10 Vdc, IE = 0, f = 1.0 MHz)

Crb

—

—

0.35

pF

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBTH69LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBTH69LT1

Motorola Preferred Device

1

2

3

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

COLLECTOR

3

1

BASE

2

EMITTER